Flat panel display with high efficiency and method of fabricating the same

ABSTRACT

An organic light emitting device is disclosed. In one embodiment, the organic light emitting device includes red (R), green (G) and blue (B) lower electrodes formed on a substrate. R, G, B organic thin film layers are formed on the R, G, B lower electrodes, respectively. Additionally, an upper single or multilayer electrode is formed over the substrate. Portions of the upper electrode that correspond to the R, G, B organic thin film layers, respectively, are formed to each have a different thickness. Various methods for forming the upper electrode using a fine metal mask, a halftone mask, and single and multiple photolithography processes are also disclosed.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority of Korean Patent Application No.10-2003-51811, filed on Jul. 26, 2003, and which is hereby incorporatedby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a flat panel display and,more particularly, to a flat panel display having a high efficiency inwhich a cathode electrode has a different thickness for each of red (R),green (G), and blue (B) pixels, and a method of fabricating the same.

2. Description of the Related Art

A conventional active matrix organic light emitting device includes ananode electrode which is connected to a thin film transistor, a cathodeelectrode, and a red (R), green (G), or blue (B) organic thin film layerformed therebetween. The organic thin film layer can include multiplelayers. Examples of such layers include a hole injecting layer, a holetransporting layer, R, G, B organic emission layers, a hole blockinglayer, an electron transporting layer, and an electron injecting layer.

The cathode electrode typically uses a metal electrode, which may beformed of metals such as aluminum (Al), or metals alloys such asMagnesium (Ma)-Silver (Ag). These and other metals and metal alloysfacilitate electron transportation and at the same time, protect theunderlying organic thin film layer. To render the display more stableand less susceptible to electromagnetic interference, a two-layercathode electrode is typically used. However it is nearly impossible toobtain optimized efficiency and color coordinates because theconventional cathode electrode is typically formed in a uniformthickness for each of the R, G, or B pixels.

FIG. 1 shows a cross-sectional view of a conventional active matrixorganic light emitting device which includes a conventional two-layerstructured cathode electrode.

Thin film transistors 120, 130, 140 for R, G, B unit pixels 101, 103,and 105, respectively, are formed on a buffer layer 110 of a substrate100. The thin film transistors 120, 130, 140 include source/drainregions 121 and 125, 131 and 135, and 141 and 145, gates 161, 163 165formed on a gate insulating layer 150, and source/drain electrodes 181and 185, 191 and 195, and 201 and 205 formed on an insulating interlayerlayer 170.

Anode electrodes, 220, 230 and 240, which are lower electrodes for theR, G, B unit pixels, are formed on a passivation layer 210 and areconnected to one of the drain electrodes 185, 195, and 205,respectively, through via holes 107, 109, 111.

Further, a pixel defining layer 250 for isolating respective R, G, Bunit pixels 101, 103, 105 is formed on the passivation layer 210. R, G,B organic thin film layers 271, 273, 275, respectively, are formed onthe anode electrodes 220, 230, 240 for the R, G, B unit pixels 101, 103,105, respectively, exposed through openings 261, 263, 265 of the pixeldefining layer 250. A cathode electrode 280 is formed as an upperelectrode on an entire surface of the substrate 100.

The anode electrodes 220, 230, 240 include first anode electrodes 221,231, 241, respectively, each having high reflectivity, and second anodeelectrodes 225, 235, 245 for adjusting a work function. The anodeelectrodes 220, 230, 240 have equal thicknesses for each of the R, G, Bunit pixels 101, 103, 105, respectively.

The cathode electrode 280 is formed of a first cathode electrode 281constructed of of a metal or metal alloy and a second cathode electrode283 constructed of a transparent conductive layer having excellentstability, and is formed on the entire surface of the substrate 100 witha uniform thickness. Exemplary metals and metal alloys commonly usedinclude Lithium Fluoride (LiF) or Magnesium and Silver alloys (Mg:Ag).Exemplary transparent conductive materials include Indium tin oxide(ITO) and Indium zinc oxide (IZO).

SUMMARY OF THE INVENTION

An organic light emitting device is disclosed. In one embodiment, theorganic light emitting device includes red (R), green (G) and blue (B)lower electrodes formed on a substrate. R, G, B organic thin film layersare formed on the R, G, B lower electrodes, respectively. Additionally,an upper single or multilayer electrode is formed over the substrate.Portions of the upper electrode that correspond to the R, G, B organicthin film layers, respectively, are formed to each have a differentthickness. Various methods for forming the upper electrode using a finemetal mask, a halftone mask, and single and multiple photolithographyprocesses are also disclosed. In particular, a method of fabricating ahighly efficient flat panel display capable of obtaining optimizedefficiency and color coordinates by forming a cathode electrode having adifferent thickness for each of R, G, B unit pixels is also disclosed.

BRIEF DESCRIPTION OF THE DRAWINGS

Various features and advantages of the present invention will becomemore apparent to those of ordinary skill in the art by describing indetail embodiments thereof with reference to the accompanying drawingsin which:

FIG. 1 is a cross-sectional view of a conventional top-emitting organiclight emitting device;

FIG. 2 is a cross-sectional view of an organic, top, light emittingdevice configured in accordance with an embodiment of the presentinvention;

FIGS. 3A to 3D are sequential cross-sectional views illustrating amethod of forming in an organic light emitting in which a device acathode electrode has a different thickness for each of R, G, B, inaccordance with a first embodiment of the present invention;

FIGS. 4A to 4D are sequential cross-sectional views illustrating amethod of forming, in an organic light emitting device, a cathodeelectrode having a different thickness for each of R, G, B, inaccordance with a second method of the present invention,

FIGS. 5A to 5D are sequential cross-sectional views illustrating amethod of forming, in an organic light emitting device, a cathodeelectrode having a different thickness for each of R, G, B, inaccordance with a third method of the present invention;

FIG. 6 is a cross-sectional view illustrating a method of forming, in anorganic light emitting device, a cathode electrode having a differentthicknesses for each of R, G, B, in accordance with a fourth embodimentof the present invention;

FIG. 7 illustrates blue (B) luminous efficiency depending on a thicknessof a cathode electrode in an organic light emitting device configured inaccordance with an embodiment of the present invention;

FIG. 8 illustrates blue (B) color coordinates depending on a thicknessof a cathode electrode in an organic light emitting device, configuredin accordance with an embodiment of the present invention;

FIG. 9 illustrates green (G) luminous efficiency depending on athickness of a cathode electrode in an organic light emitting device,configured in accordance with an embodiment of the present invention;

FIG. 10 illustrates green (G) color coordinates depending on a thicknessof a cathode electrode in an organic light emitting device, configuredin accordance with an embodiment of the present invention;

FIG. 11 illustrates red (R) luminous efficiency depending on a thicknessof a cathode electrode in an organic light emitting device, configuredin accordance with an embodiment of the present invention;

FIG. 12 illustrates red (R) color coordinates depending on a thicknessof a cathode electrode in an organic light emitting device, configuredin accordance with an embodiment of the present invention; and

FIG. 13 illustrates red (R) luminance depending on an applied voltage inan organic light emitting device, configured in accordance with anembodiment of the present invention.

The thicknesses of the layers and regions illustrated in the figures areexaggerated for clarity of explanation.

DETAILED DESCRIPTION OF THE INVENTION

Exemplary embodiments of the present invention will now be describedmore fully with reference to the accompanying drawings. This inventionmay, however, be embodied in different forms and should not be construedas limited to the embodiments set forth herein. Rather, theseembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the invention to thoseskilled in the art.

An exemplary embodiment of the present invention provides an organiclight emitting device having R, G, B lower electrodes formed on asubstrate, R, G, B organic thin film layers (e.g. emission layers)formed on the R, G, B lower electrodes, respectively, and an upperelectrode formed over the substrate, wherein at least one of the R, G, Borganic thin film layers of the upper electrode has a differentthickness from the other R, G, B organic thin film layers.

In a particular exemplary embodiment, the upper electrode includes afirst upper electrode material formed on the substrate and a secondupper electrode material formed on the first upper electrode material.Such that a portion of the second upper electrode material thatcorresponds to a R, G or B organic thin film layer of the lower R, G,and B electrodes has a different thickness from its counterpartportions. The first upper electrode material may be formed of one ormore metals and the second upper electrode material may be formed of oneor more transparent conductive materials. Exemplary metals and metalalloys include LiF and Mg:Ag and the like. Exemplary transparentconductive materials include ITO, IZO, and the like.

On one exemplary embodiment, the second upper electrode material isformed in a thickness of approximately 800 Å to approximately 2400 Å,because a thickness of approximately 800 Å to approximately 1600 Åprovides high luminous efficiency, and a thickness of approximately 800Å—approximately 2400 Å provides high color purity. A portioncorresponding to an R organic thin film layer, of the second upperelectrode material, preferably has a thickness of approximately 1200 Åor approximately 2400 Å; a portion corresponding to an G organic thinfilm layer preferably has a thickness of approximately 800 Å, and aportion corresponding to a B organic thin film layer preferably has athickness of approximately 1600 Å.

In another exemplary embodiment, the upper electrode includes a firstupper electrode material formed on the substrate, and a second upperelectrode material on the first upper electrode material, whereinportions corresponding to the R, G, B organic thin film emission layershave different thicknesses. In this embodiment, the second upperelectrode material includes first layers for the R, G, B unit pixelsindependently formed having a different thickness on respective portionsof the first upper electrode material corresponding to the R, G, Bemission layers, and a second layer formed in a uniform thickness on thefirst layer and the first upper electrode material.

In another exemplary embodiment, the upper electrode includes a firstupper electrode material formed on the substrate, and a second upperelectrode material on the first upper electrode material, whereinportions corresponding to the R, G, B emission layers have differentthicknesses. The second upper electrode material includes a first layerof uniform thickness formed on the first upper electrode material, andsecond layers for the R, G, B unit pixels having different thicknesseson respective portions of the first layer corresponding to the R, G, Bemission layers.

In this exemplary configuration, the first upper electrode material ismade of one or more metals or metal alloys, such as, but not limited toLiF, Mg:Ag, and the like, and the second upper electrode material ismade of one or more transparent conductive materials such as, but notlimited to, IZO and ITO, respectively. The cumulative thickness of thefirst layer and the second layer of the second upper electrode materialis approximately 800 Å to approximately 2400 Å.

Moreover, another exemplary embodiment of the present invention providesa method of forming an organic light emitting device. In this method R,G, B unit pixels, including their corresponding R, G, B lower electrodesand their corresponding R, G, and B organic film layers, are formed on asubstrate. An upper electrode having portions of varying thickness thatcorrespond to the R, G, and B emission layers is then formed over thesubstrate. Method steps may include, inter alia, forming the upperelectrode, (e.g., forming a first upper electrode material on thesubstrate) and forming a second upper electrode material on the firstupper electrode material to have a different thickness for each of thecorresponding R, G, B emission layers. In one embodiment, forming thesecond upper electrode material may include forming on portions of thefirst upper electrode material corresponding to the R, G, B emissionlayers a first layer, a portion or portion of which has a differentthickness for each of the corresponding R, G, B emission layers; andforming a second layer of uniform thickness on the first layer and thefirst upper electrode material.

The first layer of the second upper electrode material is formedindependently, using a fine metal mask, by depositing the second upperelectrode material in such a manner that portions of the material have adifferent thickness for each of the corresponding R, G, B emissionlayers. Alternatively, the first layer may be formed and independentlypatterned to have a different thickness for each of the corresponding R,G, B emission layers using a three-time repetition of a photolithographyprocess. Alternatively, the first layer may be formed using a singlephotolithography process that uses a half-tone mask to pattern portionsof the first layer material to have a different thickness for each ofthe corresponding R, G, and B emission layers.

In another exemplary embodiment, forming the second electrode materialon the first electrode material may include forming a first layer in auniform thickness on the first upper electrode material and forming asecond layer on the first layer such that portions to the second layercorresponding to their respective R, G, B emission layers each have adifferent thickness.

As with the first layer, the second layer of the second upper electrodematerial may be formed to have portions of varying thickness using afine metal mask, thrice-repeated photolithography process, singlephotolithography process using a half-tone mask, or like materialforming process.

FIG. 2 shows a cross-sectional view of an organic, active matrix, lightemitting device 301, including a two-layer structured cathode electrode,configured in accordance with an embodiment of the present invention.

Referring to FIG. 2, thin film transistors configured in R, G, B unitpixels are formed on a buffer layer 310 of an substrate 300. Therespective R, G, and B thin film transistors include semiconductorlayers 320, 330 and 340 formed on the buffer layer 310, each transistorincluding source/drain regions 321 and 325, 331 and 335, and 341 and345, gate electrodes 361, 363 and 365 formed on a gate insulating layer350 on the respective semiconductor layers 320, 330 and 340, andsource/drain electrodes 381 and 385, 391 and 395, and 401 and 405 formedon an insulating layer 370, and connected to the source/drain regions321 and 325, 331 and 335, and 341 and 345.

Anode electrodes 420, 430 and 440, which are lower electrodes for the R,G, B unit pixels, 491, 493, 495, respectively, are each connected to oneof the source/drain electrodes 381 and 385, 391 and 395, and 401 and 405of the respective R, G, and B thin film transistors. For example, thedrain electrodes 385, 395 and 405, are formed on a passivation layer410. Although this exemplary embodiment of the invention illustrates therespective anode electrodes 420, 430, 440 as having a laminate structureof metal materials 421, 431, 441 and transparent conductive materials425, 435, 445, the anode electrodes are necessarily not limited to sucha configuration, but may be formed into a single layer or multi-layerstructure.

A pixel defining layer 450 is formed on the passivation layer 410 forisolating the R, G, B unit pixels 491, 493, 495. R, G, B organic thinfilm layers 471, 473, 475, respectively, are formed in openings 461,463, 465 of the anode electrodes 420, 430, 440, respectively, which aredefined by the pixel defining layer 450. A cathode electrode 490 isformed over the entire surface of the substrate 300, and has a differentthickness for each of the R, G, B unit pixels 491, 493, 495. Each of theorganic thin film layers 471, 473, 475 includes at least one organicthin film layer. Depending on the embodiment, the organic thin filmlayer may be an electron hole injecting layer, an electron holetransporting layer, R, G, B organic emission layers, an electron holeblocking layer, an electron transporting layer, an electron injectinglayer, or like layers.

The cathode electrode 490 includes a first cathode electrode material481 formed over the entire surface of the substrate 300 and having auniform thickness for each of the R, G, B unit pixels 491, 493, 495, anda second cathode electrode material 485 formed on the first cathodeelectrode material 481 and having a different thickness for each of theR, G, B unit pixels 491, 493, 495. In an exemplary embodiment, the firstcathode electrode material 481 is move of a metal or metal alloy such asLiF or Mg:Ag or the like; and the second cathode electrode material 485is composed of a transparent conductive material such as IZO or ITO, orthe like.

If IZO is used to form the second cathode electrode material 485 of thecathode electrode 490, the luminous efficiency and color coordinates ofblue (B) color vary depending on the thickness of the IZO layer. Thesevariations are described below and shown in Table 1 and FIGS. 7 and 8,respectively. TABLE 1 IZO layer thickness Blue luminous efficiency Bluecolor coordinates  800 Å 3.4cd/A 0.13, 0.13 1200 Å 4.1cd/A 0.15, 0.221600 Å 4.1cd/A 0.12, 0.15 2400 Å 3.8cd/A 0.13, 0.13 NTSC systemcriterion 0.14, 0.08

As used above, the NTSC (national television systems committee) systemmeans a color TV standard system. However, other TV or media systems maybe supported.

Referring to Table 1 and FIGS. 7 and 8, if the IZO layer used as thesecond cathode electrode material 485 of the cathode electrode 490 isdeposited in a thickness of approximately 800 Å to approximately 2400 Å,a high luminous efficiency of B color can be obtained. In particular, ifthe IZO is deposited to a thickness of approximately 1200 Å toapproximately 1600 Å, a high luminous efficiency of 4 cd/A can beobtained. Furthermore, if the IZO layer is deposited in a thickness ofapproximately 800 Å to approximately 2400 Å, a high color purity of Bcolor can be obtained. Such color purity, compared to that of the NTSCsystem, in the IZO layer thickness of approximately 1600 Å is superiorto that in the IZO layer thickness of approximately 1200 Å. Thus, in oneembodiment, the second cathode electrode material 485, corresponding toa blue emission layer, of the cathode electrode 490 has a thickness ofapproximately 1600 Å in order to meet both high luminous efficiency andcolor purity for B color.

If IZO is used to form the second cathode electrode material 485 of thecathode electrode 490, the luminous efficiency and color coordinates ofgreen (G) color vary depending on the thickness of the 120 layer. Thesevariations are described and shown in Table 2 and FIGS. 9 and 10,respectively. TABLE 2 IZO layer thickness Green luminous efficiencyGreen color coordinates  800 Å 33.6cd/A 0.26, 0.67 1200 Å  9.9cd/A 0.34,0.61 1600 Å  5.6cd/A 0.28, 0.64 2400 Å 15.8cd/A 0.28, 0.67 NTSCcriterion 0.21, 0.71

Referring to Table 2 and FIGS. 9 and 10, if the IZO layer used as thesecond cathode electrode material 485 of the cathode electrode 490 isdeposited in the thickness of approximately 800 Å to approximately 2400Å, a high luminous efficiency and color purity of G color can beobtained. Superior efficiency is obtained when the IZO layer, which isthe second cathode electrode material 485, has a thickness ofapproximately 800 Å. Additionally, the color purity, compared to that ofthe NTSC, in the IZO layer thickness of approximately 800 Å orapproximately 2400 Å is superior to an IZO layer deposited to thicknessof approximately 1200 Å or approximately 1600 Å. Thus, in oneembodiment, the second cathode electrode material 485, corresponding toa green (G) emission layer, of the cathode electrode 490 has a layerthickness of approximately 800 Å in order to meet both high luminousefficiency and color purity for green color.

If IZO is used to form the second cathode electrode material 485 of thecathode electrode 490, the luminous efficiency and color coordinates ofred (R) color vary depending on the IZO layer thickness. Thesevariations are described below and shown in Table 3 and FIGS. 11 and 12,respectively. TABLE 3 IZO layer thickness Red luminous efficiency Redcolor coordinates  800 Å 8.3cd/A @400nit 0.64, 0.35 1200 Å 8.1cd/A@400nit 0.66, 0.34 1600 Å 6.4cd/A 0.66, 0.34 2400 Å 5.8cd/A 0.64, 0.34NTSC criterion 0.67, 0.33

Referring to Table 3 and FIGS. 11 and 12, if the IZO layer used as thesecond cathode electrode material 485 of the cathode electrode 490 isdeposited in the thickness of approximately 800 Å to approximately 2400Å, a high luminous efficiency and color purity with respect to the redcolor can be obtained. In one embodiment, the IZO layer being the secondcathode electrode material 485 has a thickness of approximately 1200 Åor approximately 2400 Å, from an efficiency aspect, for requiredluminance. Superior color purity, as compared to the NTSC, is excellentfor the IZO layer thickness of approximately 800 Å, 1200 Å, 1600 Å and2400 Å. Thus, in one embodiment, the second cathode electrode material485, corresponding to the red (R) emission layer, of the cathodeelectrode 490 has a layer thickness of approximately 1200 Å orapproximately 2400 Å in order to meet high luminous efficiency and colorpurity with respect to the red color.

In an exemplary embodiment, as described above, it is preferable thatthe second cathode electrode material 485 of the cathode electrode 490be deposited in a thickness of approximately 800 Å to approximately 2400Å. In such an embodiment, it is also preferable that the second cathodeelectrode material 485 be deposited in the thickness of approximately800 Å to approximately 1600 Å to obtain high luminous efficiency, andthat the second cathode electrode material 485 be deposited in thethickness of approximately 800 Å to approximately 2400 Å to obtain highcolor purity.

FIG. 13 illustrates red (R) luminance depending on an amount of voltageapplied in an organic light emitting device configured in accordancewith an embodiment of the present invention. The red (R) luminanceincreases as the applied voltage increases. If IZO is used as the secondtransparent conductive layer of the second cathode electrode material, ahigh R luminance is obtained when the IZO layer thickness isapproximately 1200 Å or approximately 2400 Å.

Turning now to the methods of the present invention.

FIGS. 3A to 3D are cross-sectional views illustrating a method offorming a cathode electrode having a different thickness in an organiclight emitting device in accordance with a first method of the presentinvention. FIGS. 3A to 3D only show a cathode electrode formed on asubstrate 500.

In this first embodiment the cathode electrode is formed by depositing asecond cathode electrode material using a fine metal mask in such amanner that portions of the second cathode electrode material have adifferent thickness for each of corresponding R, G, B unit pixels.

As shown in FIG. 3A, a first cathode electrode material 505, such as LiFor Mg:Ag, is formed on a substrate 500. Then, using a fine metal mask571, a first transparent conductive layer 510 for an R unit pixel isformed on a portion of the first cathode electrode material 505 thatcorresponds to an R organic emission layer (not shown). As shown in FIG.3B, a fine metal mask 573 is used to form a first transparent conductivelayer 520 for a G unit pixel on a portion of the first cathode electrodematerial 505 that corresponds to a G organic emission layer (not shown).

Subsequently, as shown in FIG. 3C, a first transparent conductive layer530 for a B unit pixel is formed on a portion of the first cathodeelectrode material 505 that corresponds to a B organic emission layer(not shown), using a fine metal mask 573. Finally, as shown in FIG. 3D,a second transparent conductive layer 540 is formed in a uniformthickness on the first transparent conductive layers 510, 520, 530 forthe R, G, and B unit pixels 551, 553, 555, and the first cathodeelectrode material 505.

Thus in one embodiment, the second cathode electrode material includesthe first transparent conductive layers 510, 520, 530 formedindependently to have a different thickness for each of the R, G, B unitpixels 551, 553, 555; while the second transparent conductive layer 540is formed to have a uniform thickness. The cathode electrode, therefore,is composed of the first cathode electrode material 505 having a uniformthickness on the substrate 500 and of the second cathode electrodematerial having portion of a different thickness for each ofcorresponding R, G, B unit pixels 551, 553 and 555.

In the exemplary just described, the thickness of the second cathodeelectrode material, (namely, a sum of the thickness of the firsttransparent conductive layers 510, 520, 530 and the thickness of thesecond transparent conductive material 540) is approximately 800 Å toapproximately 2400 Å. In this embodiment, the thickness of the portionof the second cathode electrode material corresponding to the R unitpixel that corresponds to the R organic emission layer, (namely, the sumof the thickness of the first transparent conductive layer 510 and thethickness of the second transparent conductive layer 540) isapproximately 1200 Å or approximately 2400 Å in order to obtain highluminous efficiency and color purity for the red (R) color. Thethickness of the portion of the second cathode electrode materialcorresponding to the G unit pixel that corresponds to the G organicemission layer, (namely, the sum of the thickness of the firsttransparent conductive layer 520 and the thickness of the secondtransparent conductive layer 540) is approximately 800 Å in order toobtain high luminous efficiency and color purity for the green (G)color. The thickness of the second cathode electrode material for the Bunit pixel that corresponds to the B organic emission layer, (namely,the sum of the thickness of the first transparent conductive layer 530and the thickness of the second transparent conductive layer 540) isapproximately 1600 Å in order to obtain high luminous efficiency andcolor purity for the blue (B) color.

FIGS. 4A to 4D are cross-sectional views illustrating a second method offorming a cathode electrode having portions of different thickness in anorganic light emitting device, in accordance with a second method of thepresent invention. These Figures only show a cathode electrode formed ona substrate 600.

In accordance with a second embodiment, this second method of forming acathode electrode is different from the first embodiment only in thatthe cathode electrode is independently patterned to include differentthickness for each of the corresponding R, G, B unit pixels using athree-time repetition of a photolithography process. That is, as shownin FIG. 4A, a transparent conductive layer 610 is deposited in athickness suitable for an R unit pixel on a substrate 600 on which afirst cathode electrode 605 is formed. Then, as shown in FIG. 4B, aportion of the first transparent conductive layer 615 for the R unitpixel that corresponds to an R organic emission layer (not shown) isformed by photolithographing the transparent conductive layer 610 usinga first mask (not shown).

Subsequently, a transparent conductive layer 620 is deposited to athickness suitable for a G unit pixel on an entire surface of thesubstrate 600, and then a portion of the first transparent conductivelayer 625 corresponding to the G unit pixel is formed byphotolithographing the transparent conductive layer 620 using a secondmask (not shown), as shown in FIG. 4C.

Next, a transparent conductive layer 630 is deposited over the entiresurface of the substrate 600 to a thickness suitable for a B unit pixel,and then a portion of the first transparent conductive layer 635 for theB unit pixel is formed by photolithographing the transparent conductivelayer 630 using a third mask (not shown). Subsequently, a secondtransparent conductive layer 640 is formed in a uniform thickness on thefirst transparent conductive layers 615, 625 and 635 and the firstcathode electrode material 605, as shown in FIG. 4D.

Thus, in this exemplary embodiment, the second cathode electrodematerial includes the first transparent conductive layers 615, 625, 635for the R, G, B unit pixels 651, 653 and 655, which were independentlyformed to have different thickness so as to correspond to the R, G, Borganic emission layers. Additionally, the second transparent conductivelayer 640 is formed over the entire surface of the substrate 600.Consequently, the cathode electrode is composed of the first cathodeelectrode material 605 having a uniform thickness and of the secondcathode electrode material, portions of which have a different thicknessfor each of the corresponding R, G, B unit pixels 651, 653 and 655.

FIGS. 5A to 5D are cross-sectional views illustrating another exemplarymethod of forming a cathode electrode in an organic light emittingdevice to have portions of different thickness, in accordance with athird method of the present invention. These figures only show a cathodeelectrode formed on a substrate.

The method of forming a cathode electrode in accordance with the thirdembodiment is different from the first or second embodiment only in thatportions of a cathode electrode are independently patterned to have adifferent thickness for each of corresponding R, G, B unit pixels usinga single photolithography process which uses a halftone mask. As shownin FIG. 5A, a first cathode electrode material 705, such as LiF orMg:Ag, is formed with a uniform thickness on a substrate 700, and atransparent conductive layer 710 is deposited on the first cathodeelectrode 705. The transparent conductive layer 710 is covered with aphotosensitive layer 720. In one embodiment, the transparent conductivelayer 710 is deposited to at least the same thickness as that of aportion of a second cathode electrode material corresponding a unitpixel which has the largest thickness of R, G, B unit pixels formed at asubsequent process.

Referring again to FIG. 5A, a halftone mask 760 is aligned to thesubstrate on which the photosensitive layer 720 and the transparentconductive layer 710 have been deposited, and then an exposure processis performed. The halftone mask 760 may include a transmitting pattern767, semi-transmitting patterns 761 and 763, and a blocking pattern 765.It will be appreciated that the transmitting pattern 767 corresponds toa portion in which all the photosensitive layer will be removed totransmit all the incident light in the exposure process. The blockingpattern 765 corresponds to a portion in which the first cathodeelectrode of the B unit pixel will be formed, namely, a portion in whichthe photosensitive layer will be left as it is, to block all incidentlight in the exposure process. Semi-transmitting patterns 761 and 763correspond to portions in which the first cathode electrode of the R andG unit pixels will be formed, namely those portions in which thephotosensitive layer will be removed by a constant thickness to transmitonly a portion of the incident light in the exposure process. Thesemi-transmitting pattern 761, corresponding to the R unit pixel, of thesemi-transmitting patterns 761, 763 is formed to transmit relativelymore incident light in the exposure process than the semi-transmittingpattern 763 corresponding to the G unit pixel.

Since the amount of the light exposed through the semi-transmittingpatterns 761, 763 and the blocking pattern 765 is different from eachother when the exposure and development process are performed,photosensitive layer patterns 721, 723, 725 corresponding to the R, G, Bunit pixels are formed to have different thicknesses from each other, asshown in FIG. 5B.

As shown in FIG. 5C, if the first cathode electrode material 710 ispatterned using the photosensitive layer patterns 721, 723 and 725 asmasks, the first transparent conductive layers 711, 713 and 715 for theR, G, B unit pixels will be formed to have a different thicknesses foreach of the R, G, B unit pixels because the photosensitive layerpatterns 721, 723 and 725 have a different thickness for each of the R,G, B unit pixels.

As shown in FIG. 5D, a second transparent conductive layer 740 may thenbe formed in a uniform thickness on the first transparent conductivelayers 711, 713, 715 (that respectively correspond to the R, G, B unitpixels) and on the first cathode electrode material 705. Thus in thisembodiment, the second cathode electrode material includes the firsttransparent conductive layers 711, 713, 715, each independently, formedto have a different thickness that corresponds to R, G, B unit pixels751, 753, 755, which have corresponding R, G, B organic thin filmlayers. Moreover, the second transparent conductive layer 740 in thisembodiment has a uniform thickness. Consequently, the cathode electrodeis composed of the first cathode electrode material 705 having a uniformthickness, and the second cathode electrode material having portions ofa different thickness for each of the corresponding R, G, B unit pixels751, 753, 755.

FIG. 6 is a cross-sectional view of an organic light emitting device inaccordance with a fourth method of the present invention.

The organic light emitting device of the fourth embodiment is differentfrom other embodiments in that in forming the second cathode electrodematerial, a first transparent conductive layer having a uniformthickness is formed on a first cathode electrode material, and then asecond transparent conductive layer having portions of differentthickness for each of corresponding R, G, B unit pixels is formed.

In this fourth exemplary embodiment, the cathode electrode includes afirst cathode electrode material 805 composed of a metal material suchas LiF or Mg:Ag formed in a uniform thickness on a substrate 800, and asecond cathode electrode material having portions of different thicknessfor each of the corresponding R, G, B unit pixels that are formed on thefirst cathode electrode material 805. The second cathode electrodematerial further includes a first transparent conductive layer 810formed in a uniform thickness on the first cathode electrode material805, and a second transparent conductive layers 821, 823, 825independently formed on the first transparent conductive layer 810 tohave a different thickness for each of the corresponding R, G, B unitpixels 831, 833, 835.

An exemplary method of forming a cathode electrode having portions ofdifferent thickness for each of the corresponding R, G, B unit pixels isnow described.

To begin, the first cathode electrode material 805 is formed bydepositing a metal or metal alloy material such as LiF or Mg:Ag or thelike in a uniform thickness on the substrate 800. Then the firsttransparent conductive layer 810 is formed by depositing a transparentconductive material such as ITO or IZO in a uniform thickness on thefirst cathode electrode material 805.

Subsequently, the second transparent conductive layers 821, 823, 825each having a different thickness for each of the corresponding R, G, Bunit pixels 831, 833 and 835 are formed on the first transparentconductive layer 810. A method of forming the second transparentconductive layers 821, 825, 827 having a different thickness for each ofR, G, B unit pixels 831, 833, 835 uses the same methods as were used toform the first transparent conductive layer of the first to thirdembodiments shown in FIGS. 3A to 3D, 4A to 4D, and 5A to 5D.

Herein the cathode electrode is shown as increasing in thickness in anorder of R, G, and B unit pixels. However, it is understood that theinvention is not so limited. Rather than portions of the cathodeelectrode corresponding to the R, G, B unit pixels may be formed in anypredetermined thickness suitable for luminous efficiency and colorpurity, as described above.

Although the embodiments of the present invention have been described byway of the top-emitting structure, they are also applicable to abottom-emitting and double-side-emitting structure, where they may beused to improve high efficiency and color purity. Further, although theembodiments of the present invention have illustrated the cathodeelectrode as using a two-layer of a metal material and a transparentconductive layer, the present invention is applicable to all methods offorming a cathode electrode having portions of different thickness foreach of the corresponding R, G, B unit pixels in order to obtain optimalcolor purity and is luminous efficiency for each of R, G, B unit pixels.

R, G, B Although the present invention has been described with referenceto the preferred embodiments thereof, those skilled in the art will beunderstood that the present invention can be variously modified andchanged without departing from the spirit and the scope of the presentinvention as defined by the following claims.

1. An organic light emitting device, comprising: red (R), green (G), andblue (B) lower electrodes formed on a substrate; R, G, B organic thinfilm layers formed on the R, G, B lower electrodes, respectively; and anupper electrode formed over the substrate, wherein at least a portion ofthe upper electrode, corresponding to one of the R, G, B organic thinfilm layers, of the upper electrode has a different thickness from otherportions of the upper electrode.
 2. The organic light emitting device ofclaim 1, the upper electrode comprising: a first upper electrodematerial formed on the substrate; and a second upper electrode materialformed on the first upper electrode material, wherein at least a portionof the second upper electrode material, corresponding to the R, G, Borganic thin film layers, has a different thickness from other portionsof the second upper electrode material.
 3. The organic light emittingdevice of claim 2, wherein the first upper electrode material iscomprised of at least one or more materials selected from LiF and Mg:Ag,and the second upper electrode material is comprised of at least one ormore materials selected from IZO and ITO.
 4. The organic light emittingdevice of claim 1, the upper electrode comprising: a first upperelectrode material formed on the substrate; and a second upper electrodematerial formed on the first upper electrode material, wherein portionsof the second upper electrode material corresponding to the R, G, Borganic thin film layers each have a different thickness.
 5. The organiclight emitting device of claim 4, wherein the first upper electrodematerial is comprised of at least one or more materials selected fromLiF and Mg:Ag, and the second upper electrode material is comprised ofat least one or more materials selected from IZO and ITO.
 6. The organiclight emitting device of claim 4, wherein the second upper electrodematerial has a thickness of approximately 800 Å to approximately 2400 Å.7. The organic light emitting device of claim 6, wherein the secondupper electrode material has a thickness of approximately 800 Å toapproximately 1600 Å to obtain a high luminous efficiency.
 8. Theorganic light emitting device of claim 6, wherein the second upperelectrode material has a thickness of approximately 800 Å toapproximately 2400 Å to obtain a high color purity.
 9. The organic lightemitting device of claim 4, wherein the portion of the second upperelectrode material, corresponding to the R organic thin film layer, hasa thickness of any one thickness in the range of approximately 1200 Å toapproximately 2400 Å.
 10. The organic light emitting device of claim 4,wherein the portion of the second upper electrode material,corresponding to the G organic thin film layer, has a thickness ofapproximately 800 Å.
 11. The organic light emitting device of claim 4,wherein the portion of the second upper electrode material,corresponding to the B organic thin film layer, has a thickness ofapproximately 1600 Å.
 12. The organic light emitting device of claim 1,wherein the upper electrode comprises: a first upper electrode materialformed on the substrate; and a second upper electrode material formed onthe first upper electrode material, the second upper electrode materialhaving portions of different thicknesses which correspond to the R, G, Borganic thin film layers, wherein the second upper electrode materialincludes: first layers for R, G, B unit pixels, the first layersindependently formed in different thicknesses on respective portions ofthe first upper electrode material that correspond to the R, G, Borganic thin film layers; and a second layer formed in a uniformthickness on the first layers and the first upper electrode material.13. The organic light emitting device of claim 12, wherein the firstupper electrode material is comprised of at least one or more materialsselected from LiF and Mg:Ag, and the first and second layers of thesecond upper electrode material are each comprised of at least one ormore materials selected from IZO and ITO.
 14. The organic light emittingdevice of claim 12, wherein the sum of the thickness of any one of thefirst layers and the thickness of the second layer of the second upperelectrode material is approximately 800 Å to 2400 Å.
 15. The organiclight emitting device of claim 1, wherein the upper electrode comprises:a first upper electrode material formed on the substrate; and a secondupper electrode material formed on the first upper electrode material,the second upper electrode material having portions of differentthicknesses which correspond to the R, G, B organic thin film layers,wherein the second upper electrode material includes: a first layerformed on the first upper electrode material in a uniform thickness; andsecond layers for the R, G, B unit pixels, each of the second layersindependently formed in a different thickness on respective portions ofthe first layer that correspond to the R, G, B organic thin film layers.16. The organic light emitting device of claim 15, wherein the firstupper electrode material is comprised of at least one or more materialsselected from LiF and Mg:Ag, and the first and second layers of thesecond upper electrode material are each comprised of at least one ormore materials selected from IZO and ITO.
 17. The organic light emittingdevice of claim 15, wherein the sum of the thickness of the first layerand the thickness of any one of the second layers of the second upperelectrode material is approximately 800 Å to 2400 Å.
 18. The organiclight emitting device of claim 1, wherein an emitting light is emittedin direction of the upper electrode.
 19. A method of forming an organiclight emitting device having R, G, B unit pixels, in which the R, G, Bunit pixels comprise R, G, B lower electrodes formed on a substrate, R,G, B organic thin film layers each formed on the R, G, B lowerelectrodes, and an upper electrode formed over the substrate, the methodcomprising the steps of: forming the upper electrode, the upperelectrode being formed by: forming a first upper electrode material onthe substrate; and forming a second upper electrode material on thefirst upper electrode material, the second upper electrode materialhaving portions, each portion having a different thickness thatcorresponds to one of the R, G, B unit pixels. wherein forming thesecond upper electrode material includes: forming on portions of thefirst upper electrode material that corresponds to the R, G, B organicthin film layers, one or more first layers, each of the first layershaving a different thickness that corresponds to one of the R, G, B unitpixels, respectively; and forming a second layer in a uniform thicknesson the first layer and the first upper electrode material.
 20. Themethod of claim 19, wherein the first layers for the R, G, and B unitpixels of the second upper electrode material are deposited using a finemetal mask so that each of the R, G, and B unit pixels has the differentthickness.
 21. The method of claim 19, wherein the first layers for theR, G, and B unit pixels of the second upper electrode material arepatterned by three-time repetition of a photolithography so that each ofthe R, G, and B unit pixels has the different thickness.
 22. The methodof claim 19, wherein the first layers for the R, G, and B unit pixels ofthe second upper electrode material are patterned by a singlephotolithography process using a halftone mask so that each of the R, G,and B unit pixels has the different thickness.
 23. The method of claim19, wherein an emitting light is emitted in direction of the upperelectrode.
 24. A method of forming an organic light emitting device withR, G, B unit pixels, in which the R, G, B unit pixels comprise R, G, Blower electrodes formed on a substrate, R, G, B organic thin film layerseach formed in the R, G, B lower electrodes, and an upper electrodeformed over the substrate, the method comprising the steps of: formingthe upper electrode, the upper electrode being formed by: forming afirst upper electrode material on the substrate; and forming a secondupper electrode material on the first upper electrode material, thesecond upper electrode material having portions, each portion having adifferent thickness that corresponds to one of the R, G, B unit pixels.R, G, B wherein forming the second upper electrode material includes:forming in a uniform thickness on the first upper electrode material afirst layer; and forming second layers for the R, G, B unit pixels onportions of the first layer that correspond to the R, G, B organic thinfilm layers, one or more second layers, so that each of the R, G, and Bunit pixels has the different thickness.
 25. The method of claim 24,wherein the second layers for the R, G, and B unit pixels of the secondupper electrode material are deposited using a fine metal mask so thateach of the R, G, and B unit pixels has the same thickness.
 26. Themethod of claim 24, wherein the second layers for the R, G, and B unitpixels of the second upper electrode material are patterned bythree-time repetition of a photolithography process so that each of theR, G, and B unit pixels has the different thickness.
 27. The method ofclaim 24, wherein the second layers for the R, G, and B unit pixels ofthe second upper electrode material are patterned by a singlephotolithography process using a halftone mask so that each of the R, G,and B unit pixels has the different thickness.
 28. The organic lightemitting device of claim 24, wherein an emitting light is emitted indirection of the upper electrode